Справочник IGBT. FGH40T65UPD

 

FGH40T65UPD Даташит. Аналоги. Параметры и характеристики.


   Наименование: FGH40T65UPD
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 268 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 26 nS
   Coesⓘ - Выходная емкость, типовая: 82 pF
   Тип корпуса: TO247
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FGH40T65UPD Datasheet (PDF)

 ..1. Size:450K  onsemi
fgh40t65upd.pdfpdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

 5.1. Size:753K  onsemi
fgh40t65uqdf.pdfpdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UQDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer superior conduction andwww.onsemi.comswitching performance and easy parallel operation. This device is wellsuited for the resonant or soft switching application such as inductionVCES ICheating and MWO.650

 6.1. Size:498K  1
fgh40t65shdf.pdfpdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer superior conductionwww.onsemi.comand switching performance and easy parallel operation. This deviceis well suited for the resonant or soft switching application such asCinduction heating and MWO.Features

 6.2. Size:662K  onsemi
fgh40t65sqd.pdfpdf_icon

FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

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History: IXGT6N170AHV | 2MBI150VA-120-50 | XD040Q120AT1S3 | SPF15N65T1T2TL | APTGT100A120D1 | 2MBI150PC-140 | SKM500GA123D

 

 
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