Справочник IGBT. FGH40T65UPD

 

FGH40T65UPD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGH40T65UPD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 268
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.65
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 26
   Емкость коллектора типовая (Cc), pf: 82
   Общий заряд затвора (Qg), typ, nC: 177
   Тип корпуса: TO247

 Аналог (замена) для FGH40T65UPD

 

 

FGH40T65UPD Datasheet (PDF)

 ..1. Size:450K  onsemi
 fgh40t65upd.pdf

FGH40T65UPD FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

 5.1. Size:753K  onsemi
 fgh40t65uqdf.pdf

FGH40T65UPD FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65UQDFDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer superior conduction andwww.onsemi.comswitching performance and easy parallel operation. This device is wellsuited for the resonant or soft switching application such as inductionVCES ICheating and MWO.650

 6.1. Size:915K  1
 fgh40t65shdf.pdf

FGH40T65UPD FGH40T65UPD

May 2014FGH40T65SHDF650 V, 40 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 3rd generation IGBTs offer superior conduction and Positive Temperaure Co-efficient for Easy Parallel Operatingswitching performance and easy parallel operation. This device

 6.2. Size:662K  onsemi
 fgh40t65sqd.pdf

FGH40T65UPD FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SQDDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 40 A Max Junction Te

 6.3. Size:3131K  onsemi
 fgh40t65spd-f085.pdf

FGH40T65UPD FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SPD-F085DescriptionUsing the novel field stop 3rd generation IGBT technology,FGH40T65SPD-F085 offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operationin various applications, which provides 50 V higher blocking voltageand rugged high current switching reliability.V

 6.4. Size:1508K  onsemi
 fgh40t65shd-f155.pdf

FGH40T65UPD FGH40T65UPD

 6.5. Size:900K  onsemi
 fgh40t65shdf.pdf

FGH40T65UPD FGH40T65UPD

FGH40T65SHDF650 V 40 A IGBT TJ =175C IGBT IGBT

 6.6. Size:475K  onsemi
 fgh40t65sh.pdf

FGH40T65UPD FGH40T65UPD

IGBT - Field Stop, Trench650 V, 40 AFGH40T65SHDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplica-tions where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ

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