FGHL75T65LQDT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGBT - Field Stop, Trench75 A, 650 VFGHL75T65LQDTDescriptionField stop 4th generation Low Vce(sat) IGBT technology and Fullcurrent rated copak Diode technology.www.onsemi.comFeaturesVCES IC VCE(Sat) Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current CapabilityC Low Saturatio

Field Stop Trench IGBT650 V, 75 AFGHL75T65MQDField stop 4th generation mid speed IGBT technology and Fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingBVCES VCE(sat) TYP IC MAX High Current Capability650 V 1.45 V 75 A Low Saturation Voltage: VC

IGBT Hybrid, Field Stop,Trench650 V, 75 A, TO247AFGHL75T65SQDCUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andwww.onsemi.comswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and

Field Stop Trench IGBT650 V, 75 AAFGHL75T65SQDTUsing the novel field stop 4th generation IGBT technology and theStealth Diode technology, AFGHL75T65SQDT offers the optimumperformance with both low conduction and switching losses for a highwww.onsemi.comefficiency operation in various applications, especially totem polebridgeless PFC and DCDC block as well.75 A, 650 V Feature

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DATA SHEETwww.onsemi.comField Stop Trench IGBT75 A, 650 V 650 V, 75 AVCESat = 1.45 VFGHL75T65MQDTCField stop 4th generation mid speed IGBT technology copackedwith full rated current diode.FeaturesG Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingE High Current Capability Low Saturation Voltage: VC