FGHL75T65LQDT Todos los transistores

 ..1. Size:336K  onsemi
 fghl75t65lqdt.pdf

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. www.onsemi.com Features VCES IC VCE(Sat) Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current Capability C Low Saturatio

 5.1. Size:334K  onsemi
 fghl75t65mqd.pdf

Field Stop Trench IGBT 650 V, 75 A FGHL75T65MQD Field stop 4th generation mid speed IGBT technology and Full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 75 A Low Saturation Voltage VC

 5.2. Size:410K  onsemi
 afghl75t65sqdc.pdf

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and

 5.3. Size:255K  onsemi
 afghl75t65sqdt.pdf

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature

 5.4. Size:298K  onsemi
 afghl75t65sq.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 5.5. Size:241K  onsemi
 fghl75t65mqdt.pdf

DATA SHEET www.onsemi.com Field Stop Trench IGBT 75 A, 650 V 650 V, 75 A VCESat = 1.45 V FGHL75T65MQDT C Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features G Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating E High Current Capability Low Saturation Voltage VC