FGHL75T65LQDT - аналоги и описание IGBT

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. www.onsemi.com Features VCES IC VCE(Sat) Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current Capability C Low Saturatio

Field Stop Trench IGBT 650 V, 75 A FGHL75T65MQD Field stop 4th generation mid speed IGBT technology and Full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 75 A Low Saturation Voltage VC

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature

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DATA SHEET www.onsemi.com Field Stop Trench IGBT 75 A, 650 V 650 V, 75 A VCESat = 1.45 V FGHL75T65MQDT C Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features G Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating E High Current Capability Low Saturation Voltage VC