FGHL75T65LQDT PDF and Equivalents Search

 

FGHL75T65LQDT Specs and Replacement

Type Designator: FGHL75T65LQDT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 469 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 181 pF

Package: TO247

 FGHL75T65LQDT Substitution

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FGHL75T65LQDT datasheet

 ..1. Size:336K  onsemi
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FGHL75T65LQDT

IGBT - Field Stop, Trench 75 A, 650 V FGHL75T65LQDT Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. www.onsemi.com Features VCES IC VCE(Sat) Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current Capability C Low Saturatio... See More ⇒

 5.1. Size:334K  onsemi
fghl75t65mqd.pdf pdf_icon

FGHL75T65LQDT

Field Stop Trench IGBT 650 V, 75 A FGHL75T65MQD Field stop 4th generation mid speed IGBT technology and Full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 75 A Low Saturation Voltage VC... See More ⇒

 5.2. Size:410K  onsemi
afghl75t65sqdc.pdf pdf_icon

FGHL75T65LQDT

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and ... See More ⇒

 5.3. Size:255K  onsemi
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FGHL75T65LQDT

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature... See More ⇒

Specs: FGH75T65UPD-F155, FGH75T65UPD-F085, FGHL40S65UQ, FGHL40T65MQD, FGHL50T65MQD, FGHL50T65MQDT, FGHL50T65SQ, FGHL50T65SQDT, IRG4PC50U, FGHL75T65MQD, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085

Keywords - FGHL75T65LQDT transistor spec

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