All IGBT. FGHL75T65LQDT Datasheet

 

FGHL75T65LQDT IGBT. Datasheet pdf. Equivalent


   Type Designator: FGHL75T65LQDT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 469 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 181 pF
   Qgⓘ - Total Gate Charge, typ: 793 nC
   Package: TO247

 FGHL75T65LQDT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGHL75T65LQDT Datasheet (PDF)

 ..1. Size:336K  onsemi
fghl75t65lqdt.pdf

FGHL75T65LQDT FGHL75T65LQDT

IGBT - Field Stop, Trench75 A, 650 VFGHL75T65LQDTDescriptionField stop 4th generation Low Vce(sat) IGBT technology and Fullcurrent rated copak Diode technology.www.onsemi.comFeaturesVCES IC VCE(Sat) Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating 650 V 75 A 1.15 V High Current CapabilityC Low Saturatio

 5.1. Size:334K  onsemi
fghl75t65mqd.pdf

FGHL75T65LQDT FGHL75T65LQDT

Field Stop Trench IGBT650 V, 75 AFGHL75T65MQDField stop 4th generation mid speed IGBT technology and Fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingBVCES VCE(sat) TYP IC MAX High Current Capability650 V 1.45 V 75 A Low Saturation Voltage: VC

 5.2. Size:410K  onsemi
afghl75t65sqdc.pdf

FGHL75T65LQDT FGHL75T65LQDT

IGBT Hybrid, Field Stop,Trench650 V, 75 A, TO247AFGHL75T65SQDCUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andwww.onsemi.comswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and

 5.3. Size:255K  onsemi
afghl75t65sqdt.pdf

FGHL75T65LQDT FGHL75T65LQDT

Field Stop Trench IGBT650 V, 75 AAFGHL75T65SQDTUsing the novel field stop 4th generation IGBT technology and theStealth Diode technology, AFGHL75T65SQDT offers the optimumperformance with both low conduction and switching losses for a highwww.onsemi.comefficiency operation in various applications, especially totem polebridgeless PFC and DCDC block as well.75 A, 650 V Feature

 5.4. Size:298K  onsemi
afghl75t65sq.pdf

FGHL75T65LQDT FGHL75T65LQDT

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 5.5. Size:241K  onsemi
fghl75t65mqdt.pdf

FGHL75T65LQDT FGHL75T65LQDT

DATA SHEETwww.onsemi.comField Stop Trench IGBT75 A, 650 V 650 V, 75 AVCESat = 1.45 VFGHL75T65MQDTCField stop 4th generation mid speed IGBT technology copackedwith full rated current diode.FeaturesG Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel OperatingE High Current Capability Low Saturation Voltage: VC

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top