FGP10N60UNDF Todos los transistores

 

FGP10N60UNDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGP10N60UNDF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 139 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 6.3 nS
   Coesⓘ - Capacitancia de salida, typ: 65 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FGP10N60UNDF Datasheet (PDF)

 ..1. Size:326K  onsemi
 fgp10n60undf.pdf pdf_icon

FGP10N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , TGD30N40P , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN .

History: MMG100S060B6R | APT20GF120KR | APTGT50A170D1 | AFGHL40T65SPD | IXGC16N60C2 | IXYH24N90C3D1 | MM50G3U120BMX

 

 
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