FGP10N60UNDF PDF and Equivalents Search

 

FGP10N60UNDF Specs and Replacement

Type Designator: FGP10N60UNDF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 139 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 6.3 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO220

 FGP10N60UNDF Substitution

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FGP10N60UNDF datasheet

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FGP10N60UNDF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGHL40T65MQD, FGHL50T65MQD, FGHL50T65MQDT, FGHL50T65SQ, FGHL50T65SQDT, FGHL75T65LQDT, FGHL75T65MQD, FGHL75T65MQDT, IKW30N60H3, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN

Keywords - FGP10N60UNDF transistor spec

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