All IGBT. FGP10N60UNDF Datasheet

 

FGP10N60UNDF IGBT. Datasheet pdf. Equivalent


   Type Designator: FGP10N60UNDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 139
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 6.3
   Collector Capacity (Cc), typ, pF: 65
   Total Gate Charge (Qg), typ, nC: 37
   Package: TO220

 FGP10N60UNDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGP10N60UNDF Datasheet (PDF)

 ..1. Size:326K  onsemi
 fgp10n60undf.pdf

FGP10N60UNDF FGP10N60UNDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , MGD623S , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN .

 

 
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