FGY100T65SCDT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGY100T65SCDT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 147 nS
Coesⓘ - Capacitancia de salida, typ: 384 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGY100T65SCDT Datasheet (PDF)
fgy100t65scdt.pdf

FGY100T65SCDTField Stop Trench IGBT, Short Circuit Rated, 650V, 100AGeneral Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Cperformance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.FeaturesG Maximu
afgy100t65spd.pdf

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
Otros transistores... FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , GT30F125 , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A .
History: ART30U120 | IXGC16N60C2 | VS-GB200NH120N | APT20GF120KR | AFGHL40T65SPD | IXYH24N90C3D1 | MM50G3U120BMX
History: ART30U120 | IXGC16N60C2 | VS-GB200NH120N | APT20GF120KR | AFGHL40T65SPD | IXYH24N90C3D1 | MM50G3U120BMX



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