FGY100T65SCDT Datasheet and Replacement
Type Designator: FGY100T65SCDT
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 147 nS
Coesⓘ - Output Capacitance, typ: 384 pF
Package: TO247
- IGBT Cross-Reference
FGY100T65SCDT Datasheet (PDF)
fgy100t65scdt.pdf

FGY100T65SCDTField Stop Trench IGBT, Short Circuit Rated, 650V, 100AGeneral Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Cperformance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.FeaturesG Maximu
afgy100t65spd.pdf

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
Datasheet: FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , GT30F125 , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A .
History: IRGSL6B60KD | VS-GB200NH120N | ISL9V5045S3 | CRG05T60A44S-G | AOK20B65M2 | APT60GF120JRD | DIM800XSM45-TS001
Keywords - FGY100T65SCDT transistor datasheet
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History: IRGSL6B60KD | VS-GB200NH120N | ISL9V5045S3 | CRG05T60A44S-G | AOK20B65M2 | APT60GF120JRD | DIM800XSM45-TS001



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