All IGBT. FGY100T65SCDT Datasheet

 

FGY100T65SCDT Datasheet and Replacement


   Type Designator: FGY100T65SCDT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 147 nS
   Coesⓘ - Output Capacitance, typ: 384 pF
   Package: TO247
      - IGBT Cross-Reference

 

FGY100T65SCDT Datasheet (PDF)

 ..1. Size:420K  onsemi
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FGY100T65SCDT

FGY100T65SCDTField Stop Trench IGBT, Short Circuit Rated, 650V, 100AGeneral Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Cperformance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.FeaturesG Maximu

 4.1. Size:339K  onsemi
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FGY100T65SCDT

Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu

Datasheet: FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD , FGHL75T65MQDT , FGP10N60UNDF , FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , GT30F125 , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A .

History: IRGSL6B60KD | VS-GB200NH120N | ISL9V5045S3 | CRG05T60A44S-G | AOK20B65M2 | APT60GF120JRD | DIM800XSM45-TS001

Keywords - FGY100T65SCDT transistor datasheet

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