FGY100T65SCDT Specs and Replacement
Type Designator: FGY100T65SCDT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 147 nS
Coesⓘ - Output Capacitance, typ: 384 pF
Package: TO247
FGY100T65SCDT Substitution - IGBT ⓘ Cross-Reference Search
FGY100T65SCDT datasheet
fgy100t65scdt.pdf
FGY100T65SCDT Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A General Description www.onsemi.com Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer the optimum C performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. Features G Maximu... See More ⇒
afgy100t65spd.pdf
Field Stop Trench IGBT with Soft Fast Recovery Diode 100 A, 650 V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various www.onsemi.com applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance cu... See More ⇒
Specs: FGHL50T65SQDT, FGHL75T65LQDT, FGHL75T65MQD, FGHL75T65MQDT, FGP10N60UNDF, FGP15N60UNDF, FGPF15N60UNDF, FGPF4565, TGAN60N60F2DS, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2, FPF2C8P2NL07A
Keywords - FGY100T65SCDT transistor spec
FGY100T65SCDT cross reference
FGY100T65SCDT equivalent finder
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FGY100T65SCDT substitution
FGY100T65SCDT replacement
History: MGP11N60E | JT020N135WED | 6MBP30VAA060-50 | FGPF15N60UNDF | IXGX82N120B3 | IXYB82N120C3H1 | FGA6530WDF
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