FGY100T65SCDT IGBT. Datasheet pdf. Equivalent
Type Designator: FGY100T65SCDT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 750
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 200
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.9
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 147
Collector Capacity (Cc), typ, pF: 384
Total Gate Charge (Qg), typ, nC: 157
Package: TO247
FGY100T65SCDT Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGY100T65SCDT Datasheet (PDF)
fgy100t65scdt.pdf
FGY100T65SCDTField Stop Trench IGBT, Short Circuit Rated, 650V, 100AGeneral Descriptionwww.onsemi.comUsing novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Cperformance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.FeaturesG Maximu
afgy100t65spd.pdf
Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
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