FPF2C110BI07AS2 Todos los transistores

 

FPF2C110BI07AS2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FPF2C110BI07AS2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 158 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Paquete / Cubierta: MODULE
 

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FPF2C110BI07AS2 Datasheet (PDF)

 0.1. Size:955K  onsemi
 fpf2c110bi07as2.pdf pdf_icon

FPF2C110BI07AS2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:1775K  onsemi
 fpf2c8p2nl07a.pdf pdf_icon

FPF2C110BI07AS2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , IHW40T60 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S .

History: RJH60A85RDPE | SHDG1025

 

 
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