FPF2C110BI07AS2 PDF and Equivalents Search

 

FPF2C110BI07AS2 Specs and Replacement

Type Designator: FPF2C110BI07AS2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 158 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Package: MODULE

 FPF2C110BI07AS2 Substitution

- IGBTⓘ Cross-Reference Search

 

FPF2C110BI07AS2 datasheet

 0.1. Size:955K  onsemi
fpf2c110bi07as2.pdf pdf_icon

FPF2C110BI07AS2

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:1775K  onsemi
fpf2c8p2nl07a.pdf pdf_icon

FPF2C110BI07AS2

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGPF4565, FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, TGPF30N43P, FPF2C8P2NL07A, FPF2G120BF07AS, HGT1S7N60A4S9A, ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3, ISL9V2540S3ST, ISL9V3036D3S

Keywords - FPF2C110BI07AS2 transistor spec

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