FPF2C110BI07AS2 Datasheet and Replacement
Type Designator: FPF2C110BI07AS2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 158 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 22 nS
Package: MODULE
- IGBT Cross-Reference
FPF2C110BI07AS2 Datasheet (PDF)
fpf2c110bi07as2.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fpf2c8p2nl07a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , STGW60V60DF , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S .
History: FD800R33KF2C-K | 2N6977 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | KE703A | BSM50GD170DL
Keywords - FPF2C110BI07AS2 transistor datasheet
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History: FD800R33KF2C-K | 2N6977 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | KE703A | BSM50GD170DL
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