FPF2C110BI07AS2 IGBT. Datasheet pdf. Equivalent
Type Designator: FPF2C110BI07AS2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 158
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 40
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.1
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 22
Total Gate Charge (Qg), typ, nC: 60
Package: MODULE
FPF2C110BI07AS2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FPF2C110BI07AS2 Datasheet (PDF)
fpf2c110bi07as2.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fpf2c8p2nl07a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , IXGH60N60C2 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S .
LIST
Last Update
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ