FPF2C8P2NL07A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FPF2C8P2NL07A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 135 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
trⓘ - Tiempo de subida, typ: 43 nS
Encapsulados: MODULE
Búsqueda de reemplazo de FPF2C8P2NL07A IGBT
- Selección ⓘ de transistores por parámetros
FPF2C8P2NL07A datasheet
fpf2c8p2nl07a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fpf2c110bi07as2.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , AOK40B65H2AL , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S , ISL9V3036S3S .
History: BT25T120CKR | JT040K065AED | AOK40B120H1 | JT050N120F2MA1E | HGT1S7N60A4S9A | IXXX100N60C3H1 | FGA30T65SHD
History: BT25T120CKR | JT040K065AED | AOK40B120H1 | JT050N120F2MA1E | HGT1S7N60A4S9A | IXXX100N60C3H1 | FGA30T65SHD
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
transistor bc547 datasheet | bc109c | d331 transistor | irfbc40 | mp16b transistor | 2sa934 | 2sd118 | 2n3403


