FPF2C8P2NL07A Specs and Replacement
Type Designator: FPF2C8P2NL07A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 135 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE FPF2C8P2NL07A Substitution - IGBTⓘ Cross-Reference Search
FPF2C8P2NL07A datasheet
fpf2c8p2nl07a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fpf2c110bi07as2.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: FGY100T65SCDT, FGY120T65SPD-F085, FGY40T120SMD, FGY60T120SQDN, FGY75T120SQDN, FGY75T95LQDT, FGY75T95SQDT, FPF2C110BI07AS2, AOK40B65H2AL, FPF2G120BF07AS, HGT1S7N60A4S9A, ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3, ISL9V2540S3ST, ISL9V3036D3S, ISL9V3036S3S
Keywords - FPF2C8P2NL07A transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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