Справочник IGBT. FPF2C8P2NL07A

 

FPF2C8P2NL07A Даташит. Аналоги. Параметры и характеристики.


   Наименование: FPF2C8P2NL07A
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 43 nS
   Тип корпуса: MODULE
     - подбор IGBT транзистора по параметрам

 

FPF2C8P2NL07A Datasheet (PDF)

 ..1. Size:1775K  onsemi
 fpf2c8p2nl07a.pdf pdf_icon

FPF2C8P2NL07A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:955K  onsemi
 fpf2c110bi07as2.pdf pdf_icon

FPF2C8P2NL07A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , FGY75T95LQDT , FGY75T95SQDT , FPF2C110BI07AS2 , FGL60N100BNTD , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 , ISL9V2540S3ST , ISL9V3036D3S , ISL9V3036S3S .

History: IXXX160N65C4 | MMG200DR120B | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | IXGT40N60C2D1 | APTGT300U120D4 | APTGT50X170BTP3

 

 
Back to Top

 


 
.