NGTB03N60R2DT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB03N60R2DT4G
Tipo de transistor: IGBT + Diode
Código de marcado: GTB0360R
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 49 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 17 pF
Qgⓘ - Carga total de la puerta, typ: 17 nC
Paquete / Cubierta: DPAK
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NGTB03N60R2DT4G Datasheet (PDF)
ngtb03n60r2dt4g.pdf

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur
ngtb05n60r2dt4g.pdf

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG75S170B6TC | SPT10N120T1 | FGD3040G2-F085C | BG200B12UY3-I | IXGK80N60AU1 | SPT25N120U1 | SPT40N120F1AT8TL
History: MMG75S170B6TC | SPT10N120T1 | FGD3040G2-F085C | BG200B12UY3-I | IXGK80N60AU1 | SPT25N120U1 | SPT40N120F1AT8TL



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