NGTB03N60R2DT4G Todos los transistores

 

NGTB03N60R2DT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB03N60R2DT4G

Tipo de transistor: IGBT + Diode

Código de marcado: GTB0360R

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 49

Tensión máxima colector-emisor |Vce|, V: 600

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 9

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7

Tensión máxima de puerta-umbral |VGE(th)|, V: 7

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 17

Capacitancia de salida (Cc), typ, pF: 17

Carga total de la puerta (Qg), typ, nC: 17

Paquete / Cubierta: DPAK

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NGTB03N60R2DT4G Datasheet (PDF)

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ngtb03n60r2dt4g.pdf

NGTB03N60R2DT4G NGTB03N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur

 9.1. Size:615K  onsemi
ngtb05n60r2dt4g.pdf

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NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge

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