All IGBT. NGTB03N60R2DT4G Datasheet

 

NGTB03N60R2DT4G Datasheet and Replacement


   Type Designator: NGTB03N60R2DT4G
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 49 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 9 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 17 pF
   Package: DPAK
 
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NGTB03N60R2DT4G Datasheet (PDF)

 0.1. Size:596K  onsemi
 ngtb03n60r2dt4g.pdf pdf_icon

NGTB03N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur

 9.1. Size:615K  onsemi
 ngtb05n60r2dt4g.pdf pdf_icon

NGTB03N60R2DT4G

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge

Datasheet: ISL9V3040D3STV , ISL9V5036P3-F085 , ISL9V5036S3S , ISL9V5036P3 , ISL9V5036S3 , ISL9V5045S3S , ISL9V5045S3 , ISL9V5045S3ST-F085 , IRG4PC50W , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG .

Keywords - NGTB03N60R2DT4G transistor datasheet

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