NGTB03N60R2DT4G Datasheet. Specs and Replacement

Type Designator: NGTB03N60R2DT4G  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 49 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 9 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 17 pF

Package: DPAK

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NGTB03N60R2DT4G datasheet

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NGTB03N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5 s Short Circuit Capability 1 1 Gate 2 Collector Applications 3 Emitter 3 General Pur... See More ⇒

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NGTB03N60R2DT4G

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5 s Short Circuit Capability 1 1 Gate 2 Collector Applications 3 Emitter 3 4 Collector Ge... See More ⇒

Specs: ISL9V3040D3STV, ISL9V5036P3-F085, ISL9V5036S3S, ISL9V5036P3, ISL9V5036S3, ISL9V5045S3S, ISL9V5045S3, ISL9V5045S3ST-F085, YGW75N65F1, NGTB05N60R2DT4G, NGTB10N60R2DT4G, NGTB15N135IHRWG, NGTB15N60S1EG, NGTB25N120FL3WG, NGTB40N120L3WG, NGTB40N65FL2WG, NGTG15N60S1EG

Keywords - NGTB03N60R2DT4G transistor spec

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