NGTB05N60R2DT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB05N60R2DT4G
Tipo de transistor: IGBT + Diode
Código de marcado: GTB0560R
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 56 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 26 nS
Coesⓘ - Capacitancia de salida, typ: 30 pF
Qgⓘ - Carga total de la puerta, typ: 30 nC
Paquete / Cubierta: DPAK
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NGTB05N60R2DT4G Datasheet (PDF)
ngtb05n60r2dt4g.pdf

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge
ngtb03n60r2dt4g.pdf

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur
Otros transistores... ISL9V5036P3-F085 , ISL9V5036S3S , ISL9V5036P3 , ISL9V5036S3 , ISL9V5045S3S , ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , HGTG30N60A4 , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F .
History: SKM200GAR123D | AOB30B65LN2V | IQGB228N120I4 | SKM200GB124D | SKM150GM12T4G
History: SKM200GAR123D | AOB30B65LN2V | IQGB228N120I4 | SKM200GB124D | SKM150GM12T4G



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