NGTB05N60R2DT4G Todos los transistores

 

NGTB05N60R2DT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB05N60R2DT4G
   Tipo de transistor: IGBT + Diode
   Código de marcado: GTB0560R
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 56
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 16
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 26
   Capacitancia de salida (Cc), typ, pF: 30
   Carga total de la puerta (Qg), typ, nC: 30
   Paquete / Cubierta: DPAK

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NGTB05N60R2DT4G Datasheet (PDF)

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ngtb05n60r2dt4g.pdf

NGTB05N60R2DT4G
NGTB05N60R2DT4G

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge

 9.1. Size:596K  onsemi
ngtb03n60r2dt4g.pdf

NGTB05N60R2DT4G
NGTB05N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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