All IGBT. NGTB05N60R2DT4G Datasheet

 

NGTB05N60R2DT4G IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB05N60R2DT4G
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GTB0560R
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 56 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Qgⓘ - Total Gate Charge, typ: 30 nC
   Package: DPAK

 NGTB05N60R2DT4G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB05N60R2DT4G Datasheet (PDF)

 0.1. Size:615K  onsemi
 ngtb05n60r2dt4g.pdf

NGTB05N60R2DT4G NGTB05N60R2DT4G

NGTB05N60R2DT4G IGBT www.onsemi.com 600V, 8A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] 2,4 IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector Ge

 9.1. Size:596K  onsemi
 ngtb03n60r2dt4g.pdf

NGTB05N60R2DT4G NGTB05N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V] 2,4 IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter3 General Pur

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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