NGTB25N120FL3WG Todos los transistores

 

NGTB25N120FL3WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB25N120FL3WG
   Tipo de transistor: IGBT + Diode
   Código de marcado: 25N120FL3
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 349 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 94 pF
   Qgⓘ - Carga total de la puerta, typ: 136 nC
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de NGTB25N120FL3WG - IGBT

 

NGTB25N120FL3WG Datasheet (PDF)

 0.1. Size:154K  onsemi
ngtb25n120fl3wg.pdf

NGTB25N120FL3WG
NGTB25N120FL3WG

NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft

 2.1. Size:186K  onsemi
ngtb25n120fl.pdf

NGTB25N120FL3WG
NGTB25N120FL3WG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:148K  onsemi
ngtb25n120fl2.pdf

NGTB25N120FL3WG
NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.3. Size:144K  onsemi
ngtb25n120fl2wg.pdf

NGTB25N120FL3WG
NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.4. Size:186K  onsemi
ngtb25n120flwg.pdf

NGTB25N120FL3WG
NGTB25N120FL3WG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

Otros transistores... ISL9V5045S3S , ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , FGW75N60HD , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 .

 

 
Back to Top

 


NGTB25N120FL3WG
  NGTB25N120FL3WG
  NGTB25N120FL3WG
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top