NGTB25N120FL3WG - аналоги и описание IGBT

 

NGTB25N120FL3WG - Аналоги. Основные параметры


   Наименование: NGTB25N120FL3WG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 94 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB25N120FL3WG

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры NGTB25N120FL3WG

 0.1. Size:154K  onsemi
 ngtb25n120fl3wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft

 2.1. Size:186K  onsemi
 ngtb25n120fl.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

 2.2. Size:148K  onsemi
 ngtb25n120fl2.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

 2.3. Size:144K  onsemi
 ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ISL9V5045S3S , ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , IRGP4062D , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 .

 

 
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