Справочник IGBT. NGTB25N120FL3WG

 

NGTB25N120FL3WG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB25N120FL3WG
   Тип транзистора: IGBT + Diode
   Маркировка: 25N120FL3
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 94 pF
   Qgⓘ - Общий заряд затвора, typ: 136 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTB25N120FL3WG

 

 

NGTB25N120FL3WG Datasheet (PDF)

 0.1. Size:154K  onsemi
 ngtb25n120fl3wg.pdf

NGTB25N120FL3WG NGTB25N120FL3WG

NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft

 2.1. Size:186K  onsemi
 ngtb25n120fl.pdf

NGTB25N120FL3WG NGTB25N120FL3WG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:148K  onsemi
 ngtb25n120fl2.pdf

NGTB25N120FL3WG NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.3. Size:144K  onsemi
 ngtb25n120fl2wg.pdf

NGTB25N120FL3WG NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.4. Size:186K  onsemi
 ngtb25n120flwg.pdf

NGTB25N120FL3WG NGTB25N120FL3WG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

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