All IGBT. NGTB25N120FL3WG Datasheet

 

NGTB25N120FL3WG Datasheet and Replacement


   Type Designator: NGTB25N120FL3WG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 25N120FL3
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 349 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 94 pF
   Qgⓘ - Total Gate Charge, typ: 136 nC
   Package: TO247
      - IGBT Cross-Reference

 

NGTB25N120FL3WG Datasheet (PDF)

 0.1. Size:154K  onsemi
 ngtb25n120fl3wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft

 2.1. Size:186K  onsemi
 ngtb25n120fl.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:148K  onsemi
 ngtb25n120fl2.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.3. Size:144K  onsemi
 ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - NGTB25N120FL3WG transistor datasheet

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