NGTB25N120FL3WG PDF and Equivalents Search

 

NGTB25N120FL3WG Specs and Replacement

Type Designator: NGTB25N120FL3WG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 349 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 21 nS

Coesⓘ - Output Capacitance, typ: 94 pF

Package: TO247

 NGTB25N120FL3WG Substitution

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NGTB25N120FL3WG datasheet

 0.1. Size:154K  onsemi
 ngtb25n120fl3wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft ... See More ⇒

 2.1. Size:186K  onsemi
 ngtb25n120fl.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒

 2.2. Size:148K  onsemi
 ngtb25n120fl2.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒

 2.3. Size:144K  onsemi
 ngtb25n120fl2wg.pdf pdf_icon

NGTB25N120FL3WG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒

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Specs: ISL9V5045S3S , ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , IRGP4062D , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 .

History: STGW45NC60WD | SPT25N120F1 | SPT60N65F1A1T8TL | TA49021

Keywords - NGTB25N120FL3WG transistor spec

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