NGTB40N120L3WG
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB40N120L3WG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 454
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.55
V @25℃
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 30
nS
Coesⓘ - Capacitancia de salida, typ: 140
pF
Paquete / Cubierta:
TO247
- Selección de transistores por parámetros
NGTB40N120L3WG
Datasheet (PDF)
..1. Size:155K onsemi
ngtb40n120l3wg.pdf 
NGTB40N120L3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for motor driver applications. Incorporated into the device iswww.onsem
3.1. Size:176K onsemi
ngtb40n120lwg.pdf
NGTB40N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
3.2. Size:176K onsemi
ngtb40n120l.pdf
NGTB40N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device
4.1. Size:145K onsemi
ngtb40n120fl2wg.pdf
NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on
4.2. Size:193K onsemi
ngtb40n120flwg.pdf
NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged
4.3. Size:160K onsemi
ngtb40n120ihl.pdf
NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
4.4. Size:177K onsemi
ngtb40n120ihrwg.pdf
NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
4.5. Size:193K onsemi
ngtb40n120fl.pdf
NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged
4.6. Size:160K onsemi
ngtb40n120ihlwg.pdf
NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
4.7. Size:86K onsemi
ngtb40n120s.pdf
NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co
4.8. Size:84K onsemi
ngtb40n120swg.pdf
NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co
4.9. Size:181K onsemi
ngtb40n120ihr.pdf
NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
4.10. Size:148K onsemi
ngtb40n120fl2.pdf
NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on
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History: MMG600WB065B6TC
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