NGTB40N120L3WG PDF and Equivalents Search

 

NGTB40N120L3WG Specs and Replacement


   Type Designator: NGTB40N120L3WG
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 454 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 160 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247
 

 NGTB40N120L3WG Substitution

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NGTB40N120L3WG datasheet

 ..1. Size:155K  onsemi
ngtb40n120l3wg.pdf pdf_icon

NGTB40N120L3WG

NGTB40N120L3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is www.onsem... See More ⇒

 3.1. Size:176K  onsemi
ngtb40n120lwg.pdf pdf_icon

NGTB40N120L3WG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 3.2. Size:176K  onsemi
ngtb40n120l.pdf pdf_icon

NGTB40N120L3WG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒

 4.1. Size:145K  onsemi
ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120L3WG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒

Specs: ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , GT30F132 , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 .

Keywords - NGTB40N120L3WG transistor spec

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