All IGBT. NGTB40N120L3WG Datasheet

 

NGTB40N120L3WG IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB40N120L3WG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40N120L3
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 454
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 160
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 140
   Total Gate Charge (Qg), typ, nC: 220
   Package: TO247

 NGTB40N120L3WG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB40N120L3WG Datasheet (PDF)

 ..1. Size:155K  onsemi
ngtb40n120l3wg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120L3WGIGBT - Ultra Field StopThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for motor driver applications. Incorporated into the device iswww.onsem

 3.1. Size:176K  onsemi
ngtb40n120lwg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 3.2. Size:176K  onsemi
ngtb40n120l.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 4.1. Size:145K  onsemi
ngtb40n120fl2wg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 4.2. Size:193K  onsemi
ngtb40n120flwg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

 4.3. Size:160K  onsemi
ngtb40n120ihl.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 4.4. Size:177K  onsemi
ngtb40n120ihrwg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 4.5. Size:193K  onsemi
ngtb40n120fl.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

 4.6. Size:160K  onsemi
ngtb40n120ihlwg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 4.7. Size:86K  onsemi
ngtb40n120s.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co

 4.8. Size:84K  onsemi
ngtb40n120swg.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co

 4.9. Size:181K  onsemi
ngtb40n120ihr.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 4.10. Size:148K  onsemi
ngtb40n120fl2.pdf

NGTB40N120L3WG
NGTB40N120L3WG

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

Datasheet: ISL9V5045S3 , ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , IRG4PH50UD , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 .

 

 
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