NGTB40N120L3WG - Аналоги. Основные параметры
Наименование: NGTB40N120L3WG
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 454
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
160
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.55
V @25℃
Tj ⓘ - Максимальная температура перехода:
175
℃
tr ⓘ -
Время нарастания типовое: 30
nS
Coesⓘ - Выходная емкость, типовая: 140
pF
Тип корпуса:
TO247
Аналог (замена) для NGTB40N120L3WG
Технические параметры NGTB40N120L3WG
..1. Size:155K onsemi
ngtb40n120l3wg.pdf 

NGTB40N120L3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is www.onsem
3.1. Size:176K onsemi
ngtb40n120lwg.pdf 

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
3.2. Size:176K onsemi
ngtb40n120l.pdf 

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
4.1. Size:145K onsemi
ngtb40n120fl2wg.pdf 

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on
4.2. Size:193K onsemi
ngtb40n120flwg.pdf 

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged
4.3. Size:160K onsemi
ngtb40n120ihl.pdf 

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic
4.4. Size:177K onsemi
ngtb40n120ihrwg.pdf 

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
4.5. Size:193K onsemi
ngtb40n120fl.pdf 

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged
4.6. Size:160K onsemi
ngtb40n120ihlwg.pdf 

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic
4.7. Size:86K onsemi
ngtb40n120s.pdf 

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http //onsemi.co
4.8. Size:84K onsemi
ngtb40n120swg.pdf 

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http //onsemi.co
4.9. Size:181K onsemi
ngtb40n120ihr.pdf 

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
4.10. Size:148K onsemi
ngtb40n120fl2.pdf 

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on
Другие IGBT... ISL9V5045S3
, ISL9V5045S3ST-F085
, NGTB03N60R2DT4G
, NGTB05N60R2DT4G
, NGTB10N60R2DT4G
, NGTB15N135IHRWG
, NGTB15N60S1EG
, NGTB25N120FL3WG
, GT30F132
, NGTB40N65FL2WG
, NGTG15N60S1EG
, 2A200HB12C2F
, 2A300HB12C2F
, 2A400HB12C2F
, AIGW40N65H5
, AIGW50N65F5
, AIGW50N65H5
.