NGTB40N65FL2WG Todos los transistores

 

NGTB40N65FL2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB40N65FL2WG
   Tipo de transistor: IGBT + Diode
   Código de marcado: 40N65FL2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 366
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 40
   Capacitancia de salida (Cc), typ, pF: 179
   Carga total de la puerta (Qg), typ, nC: 170
   Paquete / Cubierta: TO247

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NGTB40N65FL2WG Datasheet (PDF)

 ..1. Size:270K  onsemi
ngtb40n65fl2wg.pdf

NGTB40N65FL2WG
NGTB40N65FL2WG

DATA SHEETwww.onsemi.comIGBT - Field Stop II40 A, 650 VVCEsat = 1.7 VNGTB40N65FL2WGEoff = 0.44 mJThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorCperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor

 2.1. Size:137K  onsemi
ngtb40n65fl2.pdf

NGTB40N65FL2WG
NGTB40N65FL2WG

NGTB40N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.1. Size:175K  onsemi
ngtb40n65ihl2wg.pdf

NGTB40N65FL2WG
NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

 5.2. Size:180K  onsemi
ngtb40n65ihl2.pdf

NGTB40N65FL2WG
NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

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