Справочник IGBT. NGTB40N65FL2WG

 

NGTB40N65FL2WG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N65FL2WG
   Тип транзистора: IGBT + Diode
   Маркировка: 40N65FL2
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 366 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 179 pF
   Qg ⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247
 

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NGTB40N65FL2WG Datasheet (PDF)

 ..1. Size:270K  onsemi
 ngtb40n65fl2wg.pdf pdf_icon

NGTB40N65FL2WG

DATA SHEETwww.onsemi.comIGBT - Field Stop II40 A, 650 VVCEsat = 1.7 VNGTB40N65FL2WGEoff = 0.44 mJThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorCperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor

 2.1. Size:137K  onsemi
 ngtb40n65fl2.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

 5.2. Size:180K  onsemi
 ngtb40n65ihl2.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , BT60T60ANFK , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R .

History: STGW15H120F2 | IXGH30N60B4 | SPM1003 | IRGS4064D | IGC193T120T8RM

 

 
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