NGTB40N65FL2WG - аналоги и описание IGBT

 

Аналоги NGTB40N65FL2WG. Основные параметры


   Наименование: NGTB40N65FL2WG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 366 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 179 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB40N65FL2WG

   - подбор ⓘ IGBT транзистора по параметрам

 

NGTB40N65FL2WG даташит

 ..1. Size:270K  onsemi
 ngtb40n65fl2wg.pdf pdf_icon

NGTB40N65FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II 40 A, 650 V VCEsat = 1.7 V NGTB40N65FL2WG Eoff = 0.44 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for

 2.1. Size:137K  onsemi
 ngtb40n65fl2.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 5.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p

 5.2. Size:180K  onsemi
 ngtb40n65ihl2.pdf pdf_icon

NGTB40N65FL2WG

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , IRGP4063 , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R .

 

 
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