All IGBT. NGTB40N65FL2WG Datasheet

 

NGTB40N65FL2WG IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB40N65FL2WG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40N65FL2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 366 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 179 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247

 NGTB40N65FL2WG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB40N65FL2WG Datasheet (PDF)

 ..1. Size:270K  onsemi
 ngtb40n65fl2wg.pdf

NGTB40N65FL2WG NGTB40N65FL2WG

DATA SHEETwww.onsemi.comIGBT - Field Stop II40 A, 650 VVCEsat = 1.7 VNGTB40N65FL2WGEoff = 0.44 mJThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorCperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor

 2.1. Size:137K  onsemi
 ngtb40n65fl2.pdf

NGTB40N65FL2WG NGTB40N65FL2WG

NGTB40N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf

NGTB40N65FL2WG NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

 5.2. Size:180K  onsemi
 ngtb40n65ihl2.pdf

NGTB40N65FL2WG NGTB40N65FL2WG

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

Datasheet: ISL9V5045S3ST-F085 , NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , SGT60U65FD1PT , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R .

 

 
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