NGTG15N60S1EG Todos los transistores

 

NGTG15N60S1EG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTG15N60S1EG
   Tipo de transistor: IGBT
   Código de marcado: G15N60S1G
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 117
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 30
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 28
   Capacitancia de salida (Cc), typ, pF: 70
   Carga total de la puerta (Qg), typ, nC: 88
   Paquete / Cubierta: TO220

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NGTG15N60S1EG Datasheet (PDF)

 ..1. Size:124K  onsemi
ngtg15n60s1eg.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 3.1. Size:168K  onsemi
ngtg15n60s1.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 7.1. Size:226K  onsemi
ngtg15n120fl2.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 7.2. Size:226K  onsemi
ngtg15n120fl2wg.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

Otros transistores... NGTB03N60R2DT4G , NGTB05N60R2DT4G , NGTB10N60R2DT4G , NGTB15N135IHRWG , NGTB15N60S1EG , NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , IRGP4750D , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , AIGW50N65H5 , AIHD04N60R , AIHD06N60R .

 

 
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