Справочник IGBT. NGTG15N60S1EG

 

NGTG15N60S1EG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTG15N60S1EG

Тип транзистора: IGBT

Маркировка: G15N60S1G

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc), W: 117

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 30

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5

Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 28

Емкость коллектора типовая (Cc), pf: 70

Общий заряд затвора (Qg), typ, nC: 88

Тип корпуса: TO220

Аналог (замена) для NGTG15N60S1EG

 

 

NGTG15N60S1EG Datasheet (PDF)

 ..1. Size:124K  onsemi
ngtg15n60s1eg.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 3.1. Size:168K  onsemi
ngtg15n60s1.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 7.1. Size:226K  onsemi
ngtg15n120fl2wg.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

 7.2. Size:226K  onsemi
ngtg15n120fl2.pdf

NGTG15N60S1EG
NGTG15N60S1EG

NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , HCKZ75N65BH2 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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