NGTG15N60S1EG Datasheet and Replacement
Type Designator: NGTG15N60S1EG
Type: IGBT
Marking Code: G15N60S1G
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 117 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Qg ⓘ - Total Gate Charge, typ: 88 nC
Package: TO220
NGTG15N60S1EG substitution
NGTG15N60S1EG Datasheet (PDF)
ngtg15n60s1eg.pdf
NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com
ngtg15n60s1.pdf
NGTG15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.
ngtg15n120fl2.pdf
NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef
ngtg15n120fl2wg.pdf
NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Ef
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MKI100-12E8 | MII300-12A4 | AOK50B60D1 | STGWA60V60DF | MIXA10W1200TML | NGTB40N120IHRWG | IXGB200N60B3
Keywords - NGTG15N60S1EG transistor datasheet
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NGTG15N60S1EG replacement
History: MKI100-12E8 | MII300-12A4 | AOK50B60D1 | STGWA60V60DF | MIXA10W1200TML | NGTB40N120IHRWG | IXGB200N60B3
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