AIGW50N65F5 Todos los transistores

 

AIGW50N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AIGW50N65F5
   Tipo de transistor: IGBT
   Código de marcado: AG50EF5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 270
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.66
   Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 12
   Capacitancia de salida (Cc), typ, pF: 51
   Carga total de la puerta (Qg), typ, nC: 108
   Paquete / Cubierta: TO247

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AIGW50N65F5 Datasheet (PDF)

 ..1. Size:1788K  infineon
aigw50n65f5.pdf

AIGW50N65F5 AIGW50N65F5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 5.1. Size:1782K  infineon
aigw50n65h5.pdf

AIGW50N65F5 AIGW50N65F5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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