AIGW50N65F5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AIGW50N65F5  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 270 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 51 pF

Encapsulados: TO247

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AIGW50N65F5 datasheet

 ..1. Size:1788K  infineon
 aigw50n65f5.pdf pdf_icon

AIGW50N65F5

AIGW50N65F5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q G G Maximum junction temperature 175 C E Dynamically stress tested Qualified accord

 5.1. Size:1782K  infineon
 aigw50n65h5.pdf pdf_icon

AIGW50N65F5

AIGW50N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature

Otros transistores... NGTB25N120FL3WG, NGTB40N120L3WG, NGTB40N65FL2WG, NGTG15N60S1EG, 2A200HB12C2F, 2A300HB12C2F, 2A400HB12C2F, AIGW40N65H5, CRG40T60AN3H, AIGW50N65H5, AIHD04N60R, AIHD06N60R, AIHD10N60R, AIHD15N60R, AIHD15N60RF, AIKB20N60CT, AIKP20N60CT