AIGW50N65F5 Todos los transistores

 

AIGW50N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AIGW50N65F5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 51 pF
   Paquete / Cubierta: TO247

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AIGW50N65F5 Datasheet (PDF)

 ..1. Size:1788K  infineon
 aigw50n65f5.pdf

AIGW50N65F5 AIGW50N65F5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 5.1. Size:1782K  infineon
 aigw50n65h5.pdf

AIGW50N65F5 AIGW50N65F5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SGH80N60UF | RJP6065DPM | TT100N120PF1E | RJH60M6DPQ-A0 | RJP63F3DPP-M0 | APT15GP60BDQ1 | AOK30B60D1

 

 
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