AIGW50N65F5 Specs and Replacement
Type Designator: AIGW50N65F5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 51 pF
Package: TO247
AIGW50N65F5 Substitution - IGBT ⓘ Cross-Reference Search
AIGW50N65F5 datasheet
aigw50n65f5.pdf
AIGW50N65F5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q G G Maximum junction temperature 175 C E Dynamically stress tested Qualified accord... See More ⇒
aigw50n65h5.pdf
AIGW50N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature... See More ⇒
Specs: NGTB25N120FL3WG , NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , MBQ60T65PES , AIGW50N65H5 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT .
History: IXST24N60BD1 | KGF65A6H | STGW30V60DF | STGW30V60F | ISL9V5045S3S | RJH30H1DPP-M0 | RCD1565SL1
Keywords - AIGW50N65F5 transistor spec
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History: IXST24N60BD1 | KGF65A6H | STGW30V60DF | STGW30V60F | ISL9V5045S3S | RJH30H1DPP-M0 | RCD1565SL1
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