AIGW50N65H5 Todos los transistores

 

AIGW50N65H5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AIGW50N65H5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 54 pF
   Paquete / Cubierta: TO247
 

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AIGW50N65H5 Datasheet (PDF)

 ..1. Size:1782K  infineon
 aigw50n65h5.pdf pdf_icon

AIGW50N65H5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

 5.1. Size:1788K  infineon
 aigw50n65f5.pdf pdf_icon

AIGW50N65H5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

Otros transistores... NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , GT50JR22 , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT .

History: TT075N065EQ | 2MBI600U4G-120 | SII100N06 | APT150GN60J | BSM75GB60DLC | SKM75GB12V | AOK20B65M1

 

 
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