All IGBT. AIGW50N65H5 Datasheet

 

AIGW50N65H5 Datasheet and Replacement


   Type Designator: AIGW50N65H5
   Type: IGBT
   Marking Code: AG50EH5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 54 pF
   Qgⓘ - Total Gate Charge, typ: 116 nC
   Package: TO247
      - IGBT Cross-Reference

 

AIGW50N65H5 Datasheet (PDF)

 ..1. Size:1782K  infineon
 aigw50n65h5.pdf pdf_icon

AIGW50N65H5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

 5.1. Size:1788K  infineon
 aigw50n65f5.pdf pdf_icon

AIGW50N65H5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

Datasheet: NGTB40N120L3WG , NGTB40N65FL2WG , NGTG15N60S1EG , 2A200HB12C2F , 2A300HB12C2F , 2A400HB12C2F , AIGW40N65H5 , AIGW50N65F5 , FGH40N60SFD , AIHD04N60R , AIHD06N60R , AIHD10N60R , AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT .

History: IXGK28N140B3H1 | IXGR32N60CD1 | MGW20N120 | MWI30-12E6K | IGP03N120H2 | IXSP10N60B2D1 | HMG40N60T

Keywords - AIGW50N65H5 transistor datasheet

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