AIKW40N65DF5 Todos los transistores

 

AIKW40N65DF5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AIKW40N65DF5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 74 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 50 pF
   Paquete / Cubierta: TO247
 

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AIKW40N65DF5 Datasheet (PDF)

 ..1. Size:1992K  infineon
 aikw40n65df5.pdf pdf_icon

AIKW40N65DF5

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f

 4.1. Size:1996K  infineon
 aikw40n65dh5.pdf pdf_icon

AIKW40N65DF5

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

Otros transistores... AIHD15N60R , AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , RJP30H1DPD , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 .

History: TGAN40N110FD | SKM500GA123D | IXSH25N120AU1 | VWI15-12P1 | NGTB50N120FL2WG | IXGK35N120B | NGTB30N65IHL2WG

 

 
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