AIKW40N65DF5 Specs and Replacement
Type Designator: AIKW40N65DF5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 74 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO247
AIKW40N65DF5 Substitution - IGBT ⓘ Cross-Reference Search
AIKW40N65DF5 datasheet
aikw40n65df5.pdf
AIKW40N65DF5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low gate charge Q G E IGBT copacked with RAPID 1 f... See More ⇒
aikw40n65dh5.pdf
AIKW40N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E... See More ⇒
Specs: AIHD15N60R, AIHD15N60RF, AIKB20N60CT, AIKP20N60CT, AIKQ100N60CT, AIKQ120N60CT, AIKW20N60CT, AIKW30N60CT, SGT40N60NPFDPN, AIKW40N65DH5, AIKW50N60CT, AIKW50N65DF5, AIKW50N65DH5, AIKW75N60CT, AUIRGP4062D-E, AUIRGP4063D-E, AUIRGPS4070D0
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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