All IGBT. AIKW40N65DF5 Datasheet

 

AIKW40N65DF5 Datasheet and Replacement


   Type Designator: AIKW40N65DF5
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 74 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO247
      - IGBT Cross-Reference

 

AIKW40N65DF5 Datasheet (PDF)

 ..1. Size:1992K  infineon
 aikw40n65df5.pdf pdf_icon

AIKW40N65DF5

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f

 4.1. Size:1996K  infineon
 aikw40n65dh5.pdf pdf_icon

AIKW40N65DF5

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGK75N250 | 1MBI200U4H-120L-50 | FGD3245G2-F085C | 1MBI300U2H-060L-50 | AIHD10N60R | FGB3040G2-F085 | IXGA15N120B

Keywords - AIKW40N65DF5 transistor datasheet

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