AIKW40N65DH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AIKW40N65DH5
Tipo de transistor: IGBT + Diode
Código de marcado: AK40EDH5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 250
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 74
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.66
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 11
Capacitancia de salida (Cc), typ, pF: 43
Carga total de la puerta (Qg), typ, nC: 92
Paquete / Cubierta: TO247
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AIKW40N65DH5 Datasheet (PDF)
aikw40n65dh5.pdf
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AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
aikw40n65df5.pdf
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AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
Otros transistores... AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , BT40T60ANF , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC .
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