All IGBT. AIKW40N65DH5 Datasheet

 

AIKW40N65DH5 IGBT. Datasheet pdf. Equivalent


   Type Designator: AIKW40N65DH5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: AK40EDH5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 74 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qgⓘ - Total Gate Charge, typ: 92 nC
   Package: TO247

 AIKW40N65DH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AIKW40N65DH5 Datasheet (PDF)

 ..1. Size:1996K  infineon
aikw40n65dh5.pdf

AIKW40N65DH5
AIKW40N65DH5

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

 4.1. Size:1992K  infineon
aikw40n65df5.pdf

AIKW40N65DH5
AIKW40N65DH5

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f

Datasheet: AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , FGA25N120ANTD , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC .

 

 
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