AIKW40N65DH5 Datasheet and Replacement
Type Designator: AIKW40N65DH5
Type: IGBT + Anti-Parallel Diode
Marking Code: AK40EDH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 43 pF
Qgⓘ - Total Gate Charge, typ: 92 nC
Package: TO247
- IGBT Cross-Reference
AIKW40N65DH5 Datasheet (PDF)
aikw40n65dh5.pdf

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
aikw40n65df5.pdf

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
Datasheet: AIHD15N60RF , AIKB20N60CT , AIKP20N60CT , AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , BT40T60ANF , AIKW50N60CT , AIKW50N65DF5 , AIKW50N65DH5 , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC .
History: HGTP3N60A4D
Keywords - AIKW40N65DH5 transistor datasheet
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History: HGTP3N60A4D



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