IGB20N65S5 Todos los transistores

 

IGB20N65S5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGB20N65S5
   Tipo de transistor: IGBT
   Código de marcado: G20ES5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 24 pF
   Qgⓘ - Carga total de la puerta, typ: 48 nC
   Paquete / Cubierta: TO263
 

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IGB20N65S5 Datasheet (PDF)

 ..1. Size:1358K  infineon
 igb20n65s5.pdf pdf_icon

IGB20N65S5

IGB20N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim

 7.1. Size:1454K  infineon
 igb20n60h3 rev1 1g.pdf pdf_icon

IGB20N65S5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

 7.2. Size:1635K  infineon
 igb20n60h3.pdf pdf_icon

IGB20N65S5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

Otros transistores... F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , JT075N065WED , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 .

History: APT200GN60B2G

 

 
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