IGB20N65S5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IGB20N65S5
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.35 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 14 nS
Coesⓘ - Выходная емкость, типовая: 24 pF
Тип корпуса: TO263
Аналог (замена) для IGB20N65S5
IGB20N65S5 Datasheet (PDF)
igb20n65s5.pdf

IGB20N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim
igb20n60h3 rev1 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igb20n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Другие IGBT... F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , JT075N065WED , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 .
History: NGD15N41A | FGW40N120VD | IRG4PC40FDPBF | FGY75T120SQDN | MMGT15H120XB6C | ISL9V2040P3 | NGD8201BNT4G
History: NGD15N41A | FGW40N120VD | IRG4PC40FDPBF | FGY75T120SQDN | MMGT15H120XB6C | ISL9V2040P3 | NGD8201BNT4G



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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