IGB20N65S5 Datasheet and Replacement
Type Designator: IGB20N65S5
Type: IGBT
Marking Code: G20ES5
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Qg ⓘ - Total Gate Charge, typ: 48 nC
Package: TO263
IGB20N65S5 substitution
IGB20N65S5 Datasheet (PDF)
igb20n65s5.pdf

IGB20N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim
igb20n60h3 rev1 1g.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
igb20n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGB20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGB20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio
Datasheet: F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 , FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , JT075N065WED , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 .
History: IKP30N65H5 | IKP39N65ES5 | APT200GN60B2G
Keywords - IGB20N65S5 transistor datasheet
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History: IKP30N65H5 | IKP39N65ES5 | APT200GN60B2G



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