IHW25N120E1 Todos los transistores

 

IHW25N120E1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW25N120E1
   Tipo de transistor: IGBT + Diode
   Código de marcado: H25ME1
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 231 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 37 pF
   Qgⓘ - Carga total de la puerta, typ: 147 nC
   Paquete / Cubierta: TO247
 

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IHW25N120E1 Datasheet (PDF)

 ..1. Size:1893K  infineon
 ihw25n120e1.pdf pdf_icon

IHW25N120E1

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW25N120E1Data sheetIndustrial Power ControlIHW25N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

 5.1. Size:402K  infineon
 ihw25n120r2.pdf pdf_icon

IHW25N120E1

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog

 5.2. Size:402K  infineon
 ihw25n120r2g.pdf pdf_icon

IHW25N120E1

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog

Otros transistores... IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , FGH75T65UPD , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 .

History: IXGH42N30C3 | SKM100GB173D | SKM800GA176D | IXSK30N60CD1 | SKM145GAY123D

 

 
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