IHW25N120E1 Todos los transistores

 

IHW25N120E1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW25N120E1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 231 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

Coesⓘ - Capacitancia de salida, typ: 37 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IHW25N120E1 IGBT

- Selección ⓘ de transistores por parámetros

 

IHW25N120E1 datasheet

 ..1. Size:1893K  infineon
ihw25n120e1.pdf pdf_icon

IHW25N120E1

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW25N120E1 Data sheet Industrial Power Control IHW25N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic

 5.1. Size:402K  infineon
ihw25n120r2.pdf pdf_icon

IHW25N120E1

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog

 5.2. Size:402K  infineon
ihw25n120r2g.pdf pdf_icon

IHW25N120E1

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog

Otros transistores... IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IRG4PC50W , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 .

History: IKW50N65H5 | MIEB101W1200DPFEH | 6MBP35VDA120-50

 

 

 


History: IKW50N65H5 | MIEB101W1200DPFEH | 6MBP35VDA120-50

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004

 

 

↑ Back to Top
.