IHW25N120E1 IGBT. Datasheet pdf. Equivalent
Type Designator: IHW25N120E1
Type: IGBT + Anti-Parallel Diode
Marking Code: H25ME1
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 231
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 8
Maximum Junction Temperature (Tj), ℃: 150
Collector Capacity (Cc), typ, pF: 37
Total Gate Charge (Qg), typ, nC: 147
Package: TO247
IHW25N120E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHW25N120E1 Datasheet (PDF)
ihw25n120e1.pdf
Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW25N120E1Data sheetIndustrial Power ControlIHW25N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
ihw25n120r2.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120r2g.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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