IHW25N120E1 Datasheet and Replacement
Type Designator: IHW25N120E1
Type: IGBT + Anti-Parallel Diode
Marking Code: H25ME1
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 231 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 37 pF
Qg ⓘ - Total Gate Charge, typ: 147 nC
Package: TO247
IHW25N120E1 substitution
IHW25N120E1 Datasheet (PDF)
ihw25n120e1.pdf
Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW25N120E1Data sheetIndustrial Power ControlIHW25N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
ihw25n120r2.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120r2g.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MBN600GR12A | IRG4PH50UDPBF | T2250AB25E | IXRP15N120 | MG300Q2YS50 | NGTB20N120IHRWG | IXGH40N60B2
Keywords - IHW25N120E1 transistor datasheet
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History: MBN600GR12A | IRG4PH50UDPBF | T2250AB25E | IXRP15N120 | MG300Q2YS50 | NGTB20N120IHRWG | IXGH40N60B2
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