IHW25N120E1 Datasheet and Replacement
Type Designator: IHW25N120E1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 231 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 37 pF
Package: TO247
IHW25N120E1 substitution
IHW25N120E1 Datasheet (PDF)
ihw25n120e1.pdf

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW25N120E1Data sheetIndustrial Power ControlIHW25N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
ihw25n120r2.pdf

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120r2g.pdf

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
Datasheet: IGW30N60TP , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , FGH75T65UPD , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 .
History: IXGP12N60CD1 | NCE80TC65BT | IRG4BC10UD
Keywords - IHW25N120E1 transistor datasheet
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History: IXGP12N60CD1 | NCE80TC65BT | IRG4BC10UD



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