IHW30N65R5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IHW30N65R5 datasheet

..1. Size:2100K infineon
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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N65R5 Data sheet Industrial Power Control IHW30N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru

7.1. Size:130K vishay
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7.2. Size:360K infineon
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IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop technology with optimised diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, te

7.3. Size:540K infineon
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IHW30N60T Soft Switching Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with optimised diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology for 600V applications offers G - very tight parameter distribution E - high ruggedness, temperature stable b

Otros transistores... IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , TGPF30N43P , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 .