IHW30N65R5 - параметры транзистора, его аналоги, Даташиты

IHW30N65R5 Datasheet (PDF)

..1. Size:2100K infineon
ihw30n65r5.pdf pdf_icon

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N65R5Data sheetIndustrial Power ControlIHW30N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

7.1. Size:130K vishay
sihw30n60e.pdf pdf_icon

SiHW30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

7.2. Size:360K infineon
ihw30n60t-d10rev2 2.pdf pdf_icon

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, te

7.3. Size:540K infineon
ihw30n60t.pdf pdf_icon

IHW30N60TSoft Switching Series qLow Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diodeFeatures:C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers :G- very tight parameter distributionE- high ruggedness, temperature stable b

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .