All IGBT. IHW30N65R5 Datasheet

 

IHW30N65R5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHW30N65R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H30ER5
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 176
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.35
   Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 34
   Total Gate Charge (Qg), typ, nC: 153
   Package: TO247

 IHW30N65R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW30N65R5 Datasheet (PDF)

 ..1. Size:2100K  infineon
 ihw30n65r5.pdf

IHW30N65R5 IHW30N65R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N65R5Data sheetIndustrial Power ControlIHW30N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

 7.1. Size:130K  vishay
 sihw30n60e.pdf

IHW30N65R5 IHW30N65R5

SiHW30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

 7.2. Size:360K  infineon
 ihw30n60t-d10rev2 2.pdf

IHW30N65R5 IHW30N65R5

IHW30N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, te

 7.3. Size:540K  infineon
 ihw30n60t.pdf

IHW30N65R5 IHW30N65R5

IHW30N60TSoft Switching Series qLow Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diodeFeatures:C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers :G- very tight parameter distributionE- high ruggedness, temperature stable b

Datasheet: IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IXGH60N60C2 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 .

 

 
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