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IKB30N65ES5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKB30N65ES5
   Tipo de transistor: IGBT + Diode
   Código de marcado: K30EES5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 188 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 62 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 55 pF
   Qgⓘ - Carga total de la puerta, typ: 70 nC
   Paquete / Cubierta: TO263
 

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IKB30N65ES5 Datasheet (PDF)

 ..1. Size:1548K  infineon
 ikb30n65es5.pdf pdf_icon

IKB30N65ES5

IKB30N65ES5High speed switching series 5th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat 650V breakdown voltageG Low

 5.1. Size:1556K  infineon
 ikb30n65eh5.pdf pdf_icon

IKB30N65ES5

IKB30N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXST35N120B

 

 
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