IKB30N65ES5 Todos los transistores

 

IKB30N65ES5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKB30N65ES5
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 188 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 62 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 55 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IKB30N65ES5 Datasheet (PDF)

 ..1. Size:1548K  infineon
 ikb30n65es5.pdf pdf_icon

IKB30N65ES5

IKB30N65ES5High speed switching series 5th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat 650V breakdown voltageG Low

 5.1. Size:1556K  infineon
 ikb30n65eh5.pdf pdf_icon

IKB30N65ES5

IKB30N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

Otros transistores... IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , XNF15N60T , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E .

History: GT60M102 | NCE50EU65UT | STGFW30H65FB | SGTP40V120FDB2P7 | BLG60T65FDK-K | IRGS4640D

 

 
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