IKB30N65ES5 Todos los transistores

 

IKB30N65ES5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKB30N65ES5

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 188 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 62 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 55 pF

Encapsulados: TO263

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IKB30N65ES5 datasheet

 ..1. Size:1548K  infineon
 ikb30n65es5.pdf pdf_icon

IKB30N65ES5

IKB30N65ES5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode C Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal current CEsat 650V breakdown voltage G Low

 5.1. Size:1556K  infineon
 ikb30n65eh5.pdf pdf_icon

IKB30N65ES5

IKB30N65EH5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low Q G E IGBT copacked with full rated current RAPID 1 fas

Otros transistores... IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , FGL60N100BNTD , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E .

History: MIXD200W650TEH | AUIRGP4062D-E | FD1600-1200R17HP4-K-B2 | DDB2U30N08VR | AFGHL50T65SQ

 

 

 

 

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