IKB30N65ES5 Specs and Replacement
Type Designator: IKB30N65ES5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 62 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO263
IKB30N65ES5 Substitution - IGBTⓘ Cross-Reference Search
IKB30N65ES5 datasheet
ikb30n65es5.pdf
IKB30N65ES5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode C Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal current CEsat 650V breakdown voltage G Low ... See More ⇒
ikb30n65eh5.pdf
IKB30N65EH5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low Q G E IGBT copacked with full rated current RAPID 1 fas... See More ⇒
Specs: IHW40N120R5, IHW40N135R5, IKA08N65ET6, IKA10N65ET6, IKA15N65ET6, IKB15N65EH5, IKB20N65EH5, IKB30N65EH5, FGL60N100BNTD, IKB40N65EF5, IKB40N65EH5, IKB40N65ES5, IKD06N60RF, IKD15N60RC2, IKFW40N60DH3E, IKFW50N60DH3, IKFW50N60DH3E
Keywords - IKB30N65ES5 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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