IKB30N65ES5 Datasheet and Replacement
Type Designator: IKB30N65ES5
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 62 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO263
- IGBT Cross-Reference
IKB30N65ES5 Datasheet (PDF)
ikb30n65es5.pdf

IKB30N65ES5High speed switching series 5th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat 650V breakdown voltageG Low
ikb30n65eh5.pdf

IKB30N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas
Datasheet: IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , IKA10N65ET6 , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , XNF15N60T , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E .
History: MMG50HD120XT6TC | IXST35N120B | APT40GP90B2DQ2G | MSG100D350FHS | SGTP40V120FDB2P7 | MSG20T65HPT1 | MSG40T120FQC
Keywords - IKB30N65ES5 transistor datasheet
IKB30N65ES5 cross reference
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History: MMG50HD120XT6TC | IXST35N120B | APT40GP90B2DQ2G | MSG100D350FHS | SGTP40V120FDB2P7 | MSG20T65HPT1 | MSG40T120FQC



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