IKFW60N60DH3E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKFW60N60DH3E
Tipo de transistor: IGBT + Diode
Código de marcado: K60DDH3E
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 141 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 39 nS
Coesⓘ - Capacitancia de salida, typ: 98 pF
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKFW60N60DH3E IGBT
IKFW60N60DH3E Datasheet (PDF)
ikfw60n60dh3e.pdf
IKFW60N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
ikfw60n60eh3.pdf
IKFW60N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast
Otros transistores... IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , MBQ50T65FESC , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 .
History: BLG75T65FDK-F
History: BLG75T65FDK-F
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