IKFW60N60DH3E Datasheet and Replacement
Type Designator: IKFW60N60DH3E
Type: IGBT + Anti-Parallel Diode
Marking Code: K60DDH3E
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 141 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 53 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 39 nS
Coesⓘ - Output Capacitance, typ: 98 pF
Qg ⓘ - Total Gate Charge, typ: 210 nC
Package: TO247
IKFW60N60DH3E substitution
IKFW60N60DH3E Datasheet (PDF)
ikfw60n60dh3e.pdf

IKFW60N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
ikfw60n60eh3.pdf

IKFW60N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast
Datasheet: IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , MBQ50T65FESC , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 .
History: MIO600-65E11 | IXST30N60B2D1 | IRG4PH30KPBF | MII300-12E4 | APTGT150A120D3 | IXGH32N90B2D1 | MIXG180W1200TEH
Keywords - IKFW60N60DH3E transistor datasheet
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History: MIO600-65E11 | IXST30N60B2D1 | IRG4PH30KPBF | MII300-12E4 | APTGT150A120D3 | IXGH32N90B2D1 | MIXG180W1200TEH



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