All IGBT. IKFW60N60DH3E Datasheet

 

IKFW60N60DH3E IGBT. Datasheet pdf. Equivalent


   Type Designator: IKFW60N60DH3E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K60DDH3E
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 141 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 53 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qgⓘ - Total Gate Charge, typ: 210 nC
   Package: TO247

 IKFW60N60DH3E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKFW60N60DH3E Datasheet (PDF)

 ..1. Size:2002K  infineon
ikfw60n60dh3e.pdf

IKFW60N60DH3E
IKFW60N60DH3E

IKFW60N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel

 5.1. Size:2008K  infineon
ikfw60n60eh3.pdf

IKFW60N60DH3E
IKFW60N60DH3E

IKFW60N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast

Datasheet: IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IHW20N120R2 , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 .

 

 
Back to Top