IKQ40N120CH3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKQ40N120CH3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 235 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKQ40N120CH3 IGBT
IKQ40N120CH3 PDF specs
ikq40n120ch3.pdf
IKQ40N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode C Features High speed H3 technology offers High efficiency in hard switching and resonant topologies 10 sec short circuit withstand time at T =175 C vj Easy parallel... See More ⇒
ikq40n120ct2.pdf
IKQ40N120CT2 TRENCHSTOPTM 2 low V second generation IGBT ce(sat) Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features TRENCHSTOP 2 technology offers Very low V , 1.75V at nominal current CE(sat) 10 sec short circuit withstand time at T =175 C vj Easy paralleling cap... See More ⇒
Otros transistores... IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , RJP63K2DPP-M0 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827



